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產品內容
|
Item
|
Specification
|
Unit
|
Remarks
|
| Crystal Growth Method |
C
|
--
|
|
| Conductivity Type |
P
|
--
|
|
| Dopant |
Boron
|
--
|
|
| Resistivity |
0.5 ~ 3.0
|
Ω - cm
|
|
| Oxygen Contents |
< 8 x E17 at/cm3
|
|
ASTM F121-83 |
| Carbon Contents |
< 1 x E18 at/cm3
|
|
|
| Lifetime |
≧ 2.0
|
us
|
Brick Level |
| Square length |
156 ± 0.5
|
mm
|
|
| Thickness |
200 ± 20
|
µm
|
Center Point |
| TTV |
≦ 40
|
µm
|
|
| Bevel Width |
0.5~2.0
|
mm
|
|
| Warp |
≦ 100
|
μm
|
|
| Edge Chips |
≦ 0.5
|
mm
|
De-stressed |
| Front Surface |
As wire-saw
|
--
|
Length <1.5 mm ; (Max 1 pcs/w) |
| Back Surface |
As wire-saw
|
--
|
|
| Appearance |
Free of cracks, craw feet, foreign material ; Saw mark depth < 15 um ; Total micro-grain area /w < 2 cm2 |
||
| Packing | Shrink wrap ; per 100 wafers | ||
| Note | A+ Grade ; Angle between square sides : 90 deg. +/-18' | ||
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公司資訊
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網網相連
- 宏立聯合科技工程有限公司
- 東亞企業社
- 群聚大唐科技有限公司
