IXGP16N60C2, 電晶體, IGBT

Parameter

IXGP16N60C2

VCES, (V)  

600  

IC25, TC = 25°C, IGBT, (A)  

40  

IC90, TC = 90°C, IGBT, (A)  

-  

IC100, TC = 100°C, IGBT, (A)  

-  

IC110, TC = 110°C, IGBT, (A)  

16  

VCE(sat), max, TJ = 25°C, IGBT (V)  

3.0  

tfi, typ, TJ = 25°C, IGBT, (ns)  

33 

tf, typ, TJ = 25°C, IGBT, (ns)  

Eoff, typ, TJ = 125°C, IGBT (mJ)  

0.27

Eoff, typ, TJ = 150°C, IGBT (mJ)  

RthJC, max, IGBT (ºC/W)  

0.83 

IF, TC = 90°C, Diode (A)  

-  

IF, TC = 110°C, Diode (A)  

-  

RthJC, max, Diode (ºC/W)  

-  

Package Style  

TO-220